PART |
Description |
Maker |
MB84VA2100 MB84VA2101-10 MB84VA2101 MB84VA2100-10 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM (MB84VA2100 / MB84VA2101) 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
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MBM29F160TE70TR MBM29F160BE70TR MBM29F160TE70 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
|
SPANSION[SPANSION]
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MBM29F017A-90PFTR MBM29F017A MBM29F017A-12 MBM29F0 |
FLASH MEMORY CMOS 16M (2M x 8) BIT
|
SPANSION[SPANSION]
|
S29GL512N S29GL256N90FFI010 S29GL256N90FFIV20 S29G |
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64 JT 13C 13#22M PIN PLUG 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 80 ns, PDSO56 MirrorBit Flash Family MirrorBit闪存系列 Replaced by PTB48520W : 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 JT 13C 13#22D SKT PLUG
|
Spansion, Inc. Spansion Inc. ETC
|
MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16 16M X 8 FLASH 3V PROM, PBGA24 128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
MBM29DL161BE-90TN MBM29DL163BE-70PBT MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
http://
|
MBM29DL161BE-70PBT MBM29DL16XTE70 MBM29DL161BE-70T |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
Fujitsu Media Devices Limited SPANSION[SPANSION]
|
MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
CAT28F102 CAT28F102T14I-45T CAT28F102PI-45T CAT28F |
90ns 1M-bit CMOS flash memory 70ns 1M-bit CMOS flash memory 55ns 1M-bit CMOS flash memory 45ns 1M-bit CMOS flash memory 1 Megabit CMOS Flash Memory
|
Catalyst Semiconductor http://
|
MX29LV160CT MX29LV160CBTC-55R MX29LV160CBTC-70G MX |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MXIC MCNIX[Macronix International]
|